IGBT驱动保护电路的设计与测试

作者：胡宇，吕征宇 日期：2008-08-14/span> 浏览：3219 查看PDF文档

IGBT驱动保护电路的设计与测试

胡宇，吕征宇
（浙江大学 电气工程学院，浙江 杭州 310027）

摘要：在分析了绝缘栅双极性晶体管（IGBT）动态开关特性和过流状态下的电气特性的基础上，对常规的IGBT推挽驱动电路进行了改进，得到了具有良好过流保护特性的IGBT驱动电路。实践应用证明该电路结构简单，使用可靠，易于操作，配合数字信号处理器（DSP）等控制芯片能达到很好的驱动效果。
关键词：绝缘栅双极性晶体管；开关特性；数字信号处理器；过流保护；场效应晶体管
中图分类号：TP211+.51文献标识码：A文章编号：1001-4551(2008)07-0058-03

Design and test of IGBT driving-protection circuit
HU Yu, LV Zheng-yu
（College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China）
Abstract: Based on the research of the dynamic switching and over-current characteristics of insulated gate bipolar transistor(IGBT), some improvments on the original push-pull driving circuit were made, a new IGBT driving circuit was obtained, which had a good over-current protection function. The practical application proves that the circuit is simple,reliable and easy to use.Combined with controlling chips such as digital signal processor(DSP), it will do a great job in driving applications.
Key words: insulated gate bipolar transistor(IGBT); switching characteristics; digital signal processor(DSP); over-current protection; metal oxide semiconductor field effect transistor(MOSFET)